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參數(shù)資料
| 型號(hào)： | S29AL032D70BAE000 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 32兆位的CMOS 3.0伏只閃存 |
| 文件頁(yè)數(shù)： | 38/69頁(yè) |
| 文件大?。?/td> | 1970K |
| 代理商： | S29AL032D70BAE000 |
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June 13, 2005 S29AL032D_00_A3
S29AL032D
41
Ad vance
Info rmat i o n
If the output is low (Busy), the device is actively erasing or programming. (This includes program-
ming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array
data (including during the Erase Suspend mode), or is in the standby mode.
gram, and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read
at any address, and is valid after the rising edge of the final WE# pulse in the command sequence
(prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any ad-
dress cause DQ6 to toggle. (The system may use either OE# or CE# to control the read cycles.)
When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for approximately 100 s, then returns to reading array data. If not all selected sectors
are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or
is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm
is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops tog-
gling. However, the system must also use DQ2 to determine which sectors are erasing or erase-
suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling on
If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the
program command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embed-
ded Program algorithm is complete.
Table 18 on page 44 shows the outputs for Toggle Bit I on DQ6. Figure 7, on page 43 shows the
toggle bit algorithm in flowchart form, and the section Reading Toggle Bits DQ6/DQ2 on page 42
explains the algorithm. Figure 22, on page 57 shows the toggle bit timing diagrams. Figure 23,
on page 58 shows the differences between DQ2 and DQ6 in graphical form. See also the subsec-
tion on DQ2: Toggle Bit II.
DQ2: Toggle Bit II
The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular sector is actively
erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-
suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command
sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected
for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot
distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, in-
dicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status bits are required for sector and mode
information. Refer to Table 18 on page 44 to compare outputs for DQ2 and DQ6.
Figure 7, on page 43 shows the toggle bit algorithm in flowchart form, and the section Reading
Toggle Bits DQ6/DQ2 on page 42 explains the algorithm. See also the DQ6: Toggle Bit I subsec-
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PDF描述 |
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| S29AL032D70BAE002 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29AL032D90TFI042 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29AL032D90TFI043 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD016G0JDEI007 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI030 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI032 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R |
| S29AL032D70BFI000 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AL032D70BFI030 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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