參數(shù)資料
型號(hào): S29AL032D70BAE000
廠商: Spansion Inc.
英文描述: 32 Megabit CMOS 3.0 Volt-only Flash Memory
中文描述: 32兆位的CMOS 3.0伏只閃存
文件頁(yè)數(shù): 64/69頁(yè)
文件大?。?/td> 1970K
代理商: S29AL032D70BAE000
June 13, 2005 S29AL032D_00_A3
S29AL032D
65
Ad vance
Info rmat i o n
Physical Dimensions
VBN048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
10.0 x 6.0 mm
3425\ 16-038.25
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBN 048
JEDEC
N/A
10.00 mm x 6.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
1.00
OVERALL THICKNESS
A1
0.17
---
BALL HEIGHT
A2
0.62
---
0.73
BODY THICKNESS
D
10.00 BSC.
BODY SIZE
E
6.00 BSC.
BODY SIZE
D1
5.60 BSC.
BALL FOOTPRINT
E1
4.00 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
6
ROW MATRIX SIZE E DIRECTION
N
48
TOTAL BALL COUNT
φb
0.35
---
0.45
BALL DIAMETER
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
NONE
DEPOPULATED SOLDER BALLS
+0.20
-0.50
1.00
-0.50
+0.20
1.00
0.50
SEATING PLANE
A1 ID.
A1 CORNER
A2
A
b
e
D
E
B
A
M
0.15
C
M
7
6
e
SE
SD
C
0.10
A1
C
6
5
4
3
2
A
B
C
D
E
F
G
1
H
B
A
C
0.08
E1
D1
C
0.08
相關(guān)PDF資料
PDF描述
S29AL032D70BAE002 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29AL032D90TFI042 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29AL032D90TFI043 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29CD016G0JDEI004 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD016G0JDEI007 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29AL032D70BAI000 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray
S29AL032D70BAI030 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray
S29AL032D70BAI032 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R
S29AL032D70BFI000 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29AL032D70BFI030 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel