參數(shù)資料
型號(hào)： S29AL032D70BAE002
廠商： Spansion Inc.
英文描述： 32 Megabit CMOS 3.0 Volt-only Flash Memory
中文描述： 32兆位的CMOS 3.0伏只閃存
文件頁數(shù)： 22/69頁
文件大?。?/td> 1970K
代理商： S29AL032D70BAE002
June 13, 2005 S29AL032D_00_A3
S29AL032D
27
Ad vance
Info rmat i o n
without raising any device pin to a high voltage. Note that this method is only applicable to
the Secured Silicon Sector.
To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured
Silicon Sector Region command sequence to return to reading and writing the remainder of the
array.
The Secured Silicon Sector protection must be used with caution since, once protected, there is
no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in
the Secured Silicon Sector memory space can be modified in any way.
Figure 3. Secured Silicon Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes (refer to Table 17 on page 38 for command definitions). In
addition, the following hardware data protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spurious system level signals during VCC
power-up and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during
VCC power-up and power-down. The command register and all internal program/erase circuits are
disabled, and the device resets. Subsequent writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control pins to prevent unintentional writes when
VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate
a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
START
RESET# =
VIH or VID
Wait 1
μs
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove VIH or VID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
相關(guān)PDF資料
PDF描述
S29AL032D90TFI042 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29AL032D90TFI043 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29CD016G0JDEI004 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD016G0JDEI007 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD032J1JFAI122 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29AL032D70BAI000 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray
S29AL032D70BAI030 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray
S29AL032D70BAI032 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R
S29AL032D70BFI000 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29AL032D70BFI030 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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