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參數(shù)資料
| 型號(hào)： | S29AL032D70BAE002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 32兆位的CMOS 3.0伏只閃存 |
| 文件頁(yè)數(shù)： | 32/69頁(yè) |
| 文件大?。?/td> | 1970K |
| 代理商： | S29AL032D70BAE002 |
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36
S29AL032D
S29AL032D_00_A3 June 13, 2005
Advan ce
In form ati o n
within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See
Write Operation Status on page 39 for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array
data within non-suspended sectors. The system can determine the status of the program opera-
tion using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write
Operation Status on page 39 for more information.
The system may also write the autoselect command sequence when the device is in the Erase
Suspend mode. The device allows reading autoselect codes even at addresses within erasing sec-
tors, since the codes are not stored in the memory array. When the device exits the autoselect
mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation.
See Autoselect Command Sequence on page 32 for more information.
The system must write the Erase Resume command (address bits are don’t care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command
are ignored. Another Erase Suspend command can be written after the device has resumed
erasing.
Notes:
1. See Table 17 for erase command sequence.
2. See DQ3: Sector Erase Timer on page 44 for more information.
Figure 5. Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL032D90TFI042 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29AL032D90TFI043 | 32 Megabit CMOS 3.0 Volt-only Flash Memory |
| S29CD016G0JDEI004 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD016G0JDEI007 | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| S29CD032J1JFAI122 | 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI030 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray |
| S29AL032D70BAI032 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R |
| S29AL032D70BFI000 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AL032D70BFI030 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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