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參數(shù)資料
| 型號(hào)： | S524AD0XF1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K/256K-bit Serial EEPROM for Low Power |
| 中文描述： | 128K/256K-bit串行EEPROM的低功耗 |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | S524AD0XF1 |
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S524AD0XD1/D0XF1 SERIAL EEPROM
DATA SHEET
8-14
ELECTRICAL DATA
Table 8-2. Absolute Maximum Ratings
(T
A
= 25
°
C)
Parameter
Symbol
V
CC
V
IN
V
O
T
A
T
STG
V
ESD
Conditions
–
Rating
– 0.3 to + 7.0
Unit
V
Supply voltage
Input voltage
–
– 0.3 to + 7.0
V
Output voltage
–
– 0.3 to + 7.0
V
Operating temperature
–
– 40 to + 85
°
C
°
C
V
Storage temperature
–
– 65 to + 150
Electrostatic discharge
HBM
5000
MM
500
Table 8-3. D.C. Electrical Characteristics
(T
A
= – 25
°
C to + 70
°
C (Commercial), – 40
°
C
to + 85
°
C (Industrial), V
CC
= 1.8 V to 5.5 V)
Parameter
Symbol
Input low voltage
V
IL
SCL, SDA, A0, A1, A2
Input high voltage
V
IH
Input leakage current
I
LI
V
IN
= 0 to V
CC
Output leakage current
I
LO
V
O
= 0 to V
CC
Output Low voltage
V
OL
I
OL
= 0.15 mA, V
CC
= 1.8 V
I
OL
= 2.1 mA, V
CC
= 2.5 V
Supply current
Write
I
CC1
V
CC
= 5.5 V, 400 kHz
I
CC2
V
CC
= 1.8 V, 100 kHz
Read
I
CC3
V
CC
= 5.5 V, 400 kHz
I
CC4
V
CC
= 1.8 V, 100 kHz
Stand-by current
I
CC5
V
CC
= SDA = SCL = 5.5 V,
all other inputs = 0 V
I
CC6
V
CC
= SDA = SCL = 1.8 V,
all other inputs = 0 V
Conditions
Min
–
Typ
–
Max
0.3 V
CC
–
Unit
V
0.7 V
CC
–
–
V
–
10
μA
–
–
10
μA
–
–
0.2
V
0.4
–
–
3
mA
–
–
1
–
–
0.4
–
–
60
μA
–
–
1
μA
–
–
1
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