參數(shù)資料
型號: S71GL064A04BFI0B3
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和RAM
文件頁數(shù): 82/102頁
文件大?。?/td> 1606K
代理商: S71GL064A04BFI0B3
80
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
Advance
Info rmation
Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 10,000 cycles; checkerboard
data pattern.
2. Under worst case conditions of 90
°C; Worst case VCC, 100,000 cycles.
3. Effective programming time (typ) is 15 s (per word), 7.5 s (per byte).
4. Effective accelerated programming time (typ) is 12.5 s (per word), 6.3 s (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer
operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Table 22 for further information on command definitions.
Parameter
Typ (Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h
programming
prior to erasure
Chip Erase Time
S29GL032A
32
64
S29GL064A
64
128
Total Write Buffer Program Time (Notes 3, 5)
240
s
Excludes system
level overhead
Total Accelerated Effective Write Buffer Program Time
(Notes 4, 5)
200
s
Chip Program Time
S29GL032A
31.5
sec
S29GL064A
63
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