參數(shù)資料
型號(hào)： SAA4998H
廠商： NXP Semiconductors N.V.
英文描述： Field and line rate converter with noise reduction and embedded memory
中文描述： 場(chǎng)和符合降噪和嵌入式存儲(chǔ)器率轉(zhuǎn)換器
文件頁(yè)數(shù)： 29/39頁(yè)
文件大小： 175K
代理商： SAA4998H
2004 Feb 18
29
Philips Semiconductors
Product specification
Field and line rate converter with noise
reduction and embedded memory
SAA4998H
Notes
1.
S means semi static, used at initialization or mode changes; F means field frequent, in general updated in each
display field.
Selectable items are marked bold.
Almost all of the R(ead) and W(rite) registers of SAA4998H are double buffered. The write registers are latched by
a signal called New_field. New_field gets set, when REF rises after SNRST (New_field is effectively at the start of
active video). The read registers are latched by a signal called Reg_upd. Reg_upd gets set, when half the number
of active pixels of the fourth line of vertical blanking have entered the SAA4998H (Reg_upd will effectively be
active 3
1
2
lines after the REA has ended). The only exception are the registers which are not double buffered, these
are as follows:
a) Write register 025H: power_on_reset
b) Write register 02FH, bit 1: CndSet
c) Read register 0B0H to 0BFH, 0AEH and 0AFH: pan_zoom_vectors, including FalconIdent (= 0), StatusJump0
and StatusJump1.
2.
3.
8
In accordance with the Absolute Maximum Rating System (IEC 60134).
LIMITING VALUES
Notes
1.
2.
Only valid, if V
DDE
is present.
In accordance with “Transient energy (ESD machine model); SNW-FQ-302B”class C, discharging a 200 pF
capacitor via a 0.75
μ
H series inductance.
In accordance with “Transient energy (ESD human body model); SNW-FQ-302A”class 2, discharging a 100 pF
capacitor via a 1.5 k
series resistor.
3.
9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DDD
V
DDA
V
DDM
V
DDS
V
DDE
V
DDP
V
i
I
o
T
stg
T
j
V
esd
core supply voltage (internal rail)
analog supply voltage
field memory supply voltage
SRAM supply voltage
external supply voltage (output pads)
high supply voltage of internal field memories
input voltage of all I/O pins
output current
storage temperature
junction temperature
electrostatic discharge voltage on all pins
0.5
+2.5
V
0.5
+4.6
V
0.5
40
0
400
3000
+6
(1)
4
+125
125
+400
+3000
V
mA
°
C
°
C
V
V
MM; note 2
HBM; note 3
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
R
th(j-c)
thermal resistance from junction to ambient
thermal resistance from junction to case
in free air
45
10
K/W
K/W
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