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參數資料
| 型號： | SDT08S60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Thinq SiC Schottky Diode |
| 中文描述： | Thinq碳化硅肖特基二極管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 207K |
| 代理商： | SDT08S60 |
2004-03-18
Rev. 2.0
Page 1
SDT08S60
thinQ!
SiC Schottky Diode
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
V
RRM
Q
c
I
F
600
V
24
nC
8
A
P-TO220-2-2.
Pin 1
Pin 2
C
A
Type
SDT08S60
Package
P-TO220-2-2.
Ordering Code
Q67040S4647
Marking
D08S60
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
I
F
I
FRMS
I
FSM
Value
8
Unit
A
Continuous forward current,
T
C
=100°C
RMS forward current
,
f
=50
Hz
Surge non repetitive forward current, sine halfwave
11.3
T
C
=25°C,
t
p
=10ms
Repetitive peak forward current
26
T
j
=150°C,
T
C
=100°C,
D
=0.1
Non repetitive peak forward current
I
FRM
32
t
p
=10μs,
T
C
=25°C
i
2
t
value
,
T
C
=25°C,
t
p
=10ms
Repetitive peak reverse voltage
I
FMAX
80
∫
i
2
d
t
V
RRM
V
RSM
P
tot
T
j ,
T
stg
3.4
A2s
V
600
Surge peak reverse voltage
600
65
Power dissipation
,
T
C
=25°C
Operating and storage temperature
W
-55... +175
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SDT08S60_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| SDT08S60XK | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 8A 2-Pin(2+Tab) TO-220 |
| SDT100 | 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述:Thyristor-Diode Modules, Diode-Thyristor Modules |
| SDT100GK08 | 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述:Thyristor-Diode Modules, Diode-Thyristor Modules |
| SDT100GK12 | 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述:Thyristor-Diode Modules, Diode-Thyristor Modules |
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