參數(shù)資料
型號： SI3220DCX-EVB
廠商： Silicon Laboratories Inc
文件頁數(shù)： 69/112頁
文件大?。?/td> 0K
描述： DAUGHTER CARD W/DISCRETE INTRFC
標(biāo)準(zhǔn)包裝： 1
系列： ProSLIC®
主要目的： 接口，模擬前端（AFE）
已用 IC / 零件： Si3220
已供物品： 板，CD
Si3220/25 Si3200/02
6
Rev. 1.3
Not
Recommended
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Table 2. Recommended Operating Conditions
Parameter
Symbol
Test
Condition
Min*
Typ
Max*
Unit
Ambient Temperature
TA
K/F-Grade
0
25
70
oC
Ambient Temperature
TA
B/G-Grade
–40
25
85
oC
Supply Voltage, Si3220/Si3225
VDD1–VDD4
3.13
3.3/5.0
5.25
V
Supply Voltage, Si3200/Si3202
VDD
3.13
3.3/5.0
5.25
V
High Battery Supply Voltage, Si3200
VBATH
–15
—
–99
V
Low Battery Supply Voltage, Si3200
VBATL
–15
—
VBATH
V
High Battery Supply Voltage, Si3202
VBATH
–15
—
–125
V
Low Battery Supply Voltage, Si3202
VBATL
–15
—
VBATH
V
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
Table 3. 3.3 V Power Supply Characteristics1
(VDD, VDD1 – VDD4 = 3.3 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD1–VDD4 Supply
Current (Si3220/
Si3225)
IVDD1–IVDD4
Sleep mode, RESET = 0
—
200
—
A
Open (high-impedance)
—
17
—
mA
Active on-hook standby
—
16
—
mA
Forward/reverse active off-hook
—45 + ILIM
+ ABIAS
—mA
Forward/reverse active OHT
OBIAS = 4 mA, VBAT =–70 V
—47—
mA
Ringing, VRING =45Vrms, VBAT =–70 V,
Sine Wave, 1 REN load2
—26—
mA
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "3.14.4. Ringing Power Considerations" on page 54 for current and power consumption under other operating
conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional (VDD + |VBAT|) x ILOOP term.
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