參數(shù)資料
型號: SI3225DCX-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 22/112頁
文件大?。?/td> 0K
描述: DAUGHTER CARD W/DISCRETE INTRFC
標(biāo)準(zhǔn)包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3225
已供物品: 板,CD
Si3220/25 Si3200/02
Rev. 1.3
17
Not
Recommended
fo
r N
ew
D
esi
gn
s
Figure 1. SPI Timing Diagram
Table 12. Switching Characteristics—SPI
(VDD, VDD1 – VDD4 = 3.13 to 5.25 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade, CL =20 pF)
Parameter1
Symbol
Test Conditions
Min
Typ
Max
Unit
Cycle Time SCLK2
tc
62
ns
Rise Time, SCLK
tr
25
ns
Fall Time, SCLK
tf
25
ns
Delay Time, SCLK Fall to SDO Active
td1
20
ns
Delay Time, SCLK Fall to SDO
Transition
td2
20
ns
Delay Time, CS Rise to SDO Tri-state
td3
20
ns
Setup Time, CS to SCLK Fall
tsu1
25
ns
Hold Time, CS to SCLK Rise
th1
20
ns
Setup Time, SDI to SCLK Rise
tsu2
25
ns
Hold Time, SDI to SCLK Rise
th2
20
ns
Delay Time between Chip Selects
tcs
220
ns
SDI to SDITHRU Propagation Delay
td4
4
10
ns
Notes:
1. All timing is referenced to the 50% level of the waveform. Input test levels are VIH =VDDD –0.4 V, VIL =0.4 V
2. The minimum SCLK cycle time is based on a single Si3220 connected to the SPI bus. If multiple Si3220s are
connected to the same SPI bus, please contact a Silicon Laboratories representative for the recommended minimum
SCLK cycle time for your application.
SCLK
CS
SDI
t
h1
t
d3
SDO
t
d1
t
d2
t
su1
t
r
t
f
t
su2
t
h2
t
cs
t
c
SDITHRU
t
d4
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