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參數(shù)資料
| 型號： | SI4807DY-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 84K |
| 代理商： | SI4807DY-E3 |
Si4807DY
Vishay Siliconix
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com
S FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (VG1 = VG2, 25_C UNLESS NOTED)
0
5
10
15
20
25
30
012345
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50
0
50
100
150
0
5
10
15
20
25
30
02468
10
0
2
4
6
8
10
0
5
10
15
20
25
30
35
0
0.03
0.06
0.09
0.12
0.15
0
6
12
18
24
30
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
–
Drain
Current
(A)
I
D
VGS = 10, 9, 8, 7, 6, 5 V
4 V
–
Drain
Current
(A)
I
D
TC = 125_C
–55
_C
–
Gate-to-Source
V
oltage
(V)
C
–
Capacitance
(pF)
V
GS
Crss
Coss
Ciss
VDS = 15 V
ID = 6 A
–
On-Resistance
(
r DS(on)
W
)
Capacitance
On-Resistance vs. Junction Temperature
VG1S = 10 V
ID = 6 A
(Normalized)
–
On-Resistance
(
r DS(on)
W
)
VGS = 10 V
VGS = 4.5 V
3 V
25
_C
2, 1 V
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
TJ – Junction Temperature (_C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4807DY-T1 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4807DY-T1-E3 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-T1 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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