- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄225180 > SI4807DY-E3 (VISHAY SILICONIX) 6 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI4807DY-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 84K |
| 代理商： | SI4807DY-E3 |
Si4807DY
Vishay Siliconix
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com
S FaxBack 408-970-5600
2-5
TYPICAL CHARACTERISTICS (VG1 = 0 V, 25_C UNLESS NOTED)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
02468
10
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Output Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
–
Drain
Current
(A)
I
D
VG2S = 10 V
9 V
–
Gate-to-Source
V
oltage
(V)
Qg – Total Gate Charge (nC)
V
G2S
VDS = 15 V
ID = 150 mA
–
On-Resistance
(
r DS(on)
W
)
ID – Drain Current (A)
VG2S = 10 V
VG2S = 4.5 V
3, 2, 1 V
0
2
4
6
8
10
02468
10
On-Resistance vs. Gate-to-Source Voltage
–
On-Resistance
(
r DS(on)
W
)
VG2S – Gate-to-Source Voltage (V)
ID = 150 mA
8 V
7 V
6 V
5 V
4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI6463DQ | P-Channel 2.5V Specified PowerTrench MOSFET |
| SI6466DQ | 30V N-Channel PowerTrench MOSFET |
| SI9939DY-T1 | 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SI9959DY-T1 | 2000 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SIL30C-12SADJ-VS | 1-OUTPUT DC-DC REG PWR SUPPLY MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4807DY-T1 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4807DY-T1-E3 | 功能描述:MOSFET 30V 6/0.9A 2.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4808DY-T1 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。