參數(shù)資料
型號: SIGC42T120CL
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT Chip in NPT-technology
中文描述: 在不擴(kuò)散核武器條約IGBT芯片技術(shù)
文件頁數(shù): 1/4頁
文件大小: 76K
代理商: SIGC42T120CL
SIGC42T120CL
Edited by INFINEON Technologies AI PS DD HV3, L 7151-P, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology 180μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
BSM25GD120DLC E3224
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
sawn on foil C67078-A4675-
Ordering Code
SIGC42T120CL
1200V
25A
6.59 x 6.49 mm
2
A001
SIGC42T120CL
1200V
25A
6.59 x 6.49 mm
2
unsawn
C67078-A4675-
A002
MECHANICAL PARAMETER:
Raster size
6.59 x 6.49
Emitter pad size
2 x ( 2.18 x 1.58 )
Gate pad size
1.06 x 0.65
Area total / active
42.8 / 33.5
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
334 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
相關(guān)PDF資料
PDF描述
SIGC42T170R2C IGBT Chip in NPT-technology
SIGC42T170R3 IGBT3 Chip
SIGC54T60R3 IGBT-3 Chip
SIGC61T60NC IGBT Chip in NPT-technology
SIGC68T170R3 IGBT3 Chip
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SIGC42T120CQ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in Fieldstop -technology
SIGC42T120CS 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology
SIGC42T120CS2 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology
SIGC42T170R2C 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology
SIGC42T170R3 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip