參數(shù)資料
型號： SKB02N120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述： 快速IGBT在不擴散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁數(shù)： 2/13頁
文件大小： 397K
代理商： SKB02N120
SKP02N60
SKB02N60
2
Jul-02
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
R
thJC
4.2
R
thJCD
7
R
thJA
TO-220AB
62
R
thJA
TO-263AB
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=2A
T
j
=25
°
C
T
j
=150
°
C
V
GE
=0V,
I
F
=2.9A
T
j
=25
°
C
T
j
=150
°
C
I
C
=150
μ
A,
V
CE
=
V
GE
V
CE
=600V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=2A
600
-
-
Collector-emitter saturation voltage
1.7
-
1.9
2.2
2.4
2.7
Diode forward voltage
V
F
1.2
-
1.4
1.25
1.8
1.65
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
20
250
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
100
-
nA
S
1.6
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
142
18
10
14
170
22
12
18
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=2A
V
GE
=15V
TO-220AB
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
L
E
-
7
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
≤
600V,
T
j
≤
150
°
C
-
20
-
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關(guān)PDF資料
PDF描述
SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SLA24C01-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C01-S The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C02-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C02-S The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SKB02N120_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKB02N120ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 2A 62W TO263-3-2
SKB02N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKB02N60 E3266 功能描述:IGBT 晶體管 Fast IGBT NPT Soft anti-parallel EmCon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKB02N60_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*