參數(shù)資料
型號(hào)： SKB02N120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述： 快速IGBT在不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁數(shù)： 4/13頁
文件大小： 397K
代理商： SKB02N120
SKP02N60
SKB02N60
4
Jul-02
I
C
,
C
10Hz
100Hz
1kHz
10kHz
100kHz
0A
2A
4A
6A
8A
10A
12A
14A
16A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
0.01A
0.1A
1A
10A
DC
1ms
200
μ
s
50
μ
s
15
μ
s
t
p
=2
μ
s
f
,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(
T
j
≤
150
°
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 118
)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
150
°
C)
P
t
,
P
25°C
50°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(
T
j
≤
150
°
C)
75°C
100°C
125°C
0W
5W
10W
15W
20W
25W
30W
35W
I
C
,
C
25°C
50°C
75°C
100°C
125°C
0A
1A
2A
3A
4A
5A
6A
7A
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(
V
GE
≤
15V,
T
j
≤
150
°
C)
I
c
I
c
相關(guān)PDF資料
PDF描述
SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SLA24C01-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C01-S The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C02-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C02-S The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SKB02N120_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKB02N120ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 2A 62W TO263-3-2
SKB02N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKB02N60 E3266 功能描述:IGBT 晶體管 Fast IGBT NPT Soft anti-parallel EmCon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKB02N60_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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