參數(shù)資料
型號: SKB02N60
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述: 快速IGBT在不擴(kuò)散核武器條約與軟,恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁數(shù): 9/13頁
文件大?。?/td> 397K
代理商: SKB02N60
SKP02N60
SKB02N60
9
Jul-02
t
r
,
R
20A/
μ
s
60A/
μ
s
100A/
μ
s 140A/
μ
s 180A/
μ
s
0ns
100ns
200ns
300ns
400ns
500ns
I
F
= 1A
I
F
= 2A
I
F
= 4A
Q
r
,
R
20A/
μ
s
60A/
μ
s
100A/
μ
s 140A/
μ
s 180A/
μ
s
0nC
40nC
80nC
120nC
160nC
200nC
240nC
280nC
I
F
= 1A
I
F
= 2A
I
F
= 4A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
I
r
,
R
20A/
μ
s
60A/
μ
s
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
100A/
μ
s
140A/
μ
s
180A/
μ
s
0A
1A
2A
3A
4A
5A
I
F
= 1A
I
F
= 4A
I
F
= 2A
d
r
/
,
D
O
20A/
μ
s
60A/
μ
s
100A/
μ
s
140A/
μ
s
180A/
μ
s
0A/
μ
s
50A/
μ
s
100A/
μ
s
150A/
μ
s
200A/
μ
s
250A/
μ
s
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
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參數(shù)描述
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