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參數(shù)資料
| 型號： | SPB-3018 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 400 - 2500 MHz 1W Medium Power Active Bias InGaP/GaAs HBT Amplifier |
| 中文描述： | 400 - 2500兆赫1W的中等功率有源偏置的InGaP / GaAs HBT的放大器 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 205K |
| 代理商： | SPB-3018 |
Preliminary
Product Description
The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar
Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip
Class AB bias circuit which provides excellent efficiency while maintain-
ing good linearity. The on-chip bias also allows the device output power
(and current) to drive up towards saturation as the input power in-
creases. The SPB-3018 is an ideal choice for multi-carrier as well as
digital wireless telecom or general wireless applications in the 400-2500
MHz range.
Broomfield, CO 80021
1
EDS-103980 Rev C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC http://www.sirenza.com
SPB-3018
SPB-3018Z
400 - 2500 MHz 1W Medium Power
Active Bias InGaP/GaAs HBT Amplifier
Product Features
Available in Lead Free, RoHS compliant, & Green packaging
Efficient Class AB operation
P1dB = 30 dBm @ 1960MHz
High Linearity/ACP performance
MSL 1 moisture rating
Power shutdown using V
PC
(less than 5uA I
DQ
)
Applications
W-CDMA, PCS, Cellular Systems
Multi-Carrier Applications
Pb
RoHS Compliant
&
Package
Green
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
880 MHz
1960 MHz
2140 MHz
30
30
30
18
13.5
13
1.3:1
1.2:1
1.3:1
21.5
22
21
5
4
4
12
15
Channel Power
IS-95 at 880/1960MHz, -55dBc ACP
WCDMA at 2140MHz, -50dBc ACP
V
D
Device Operating Voltage
V
4.75
5
5.25
I
DQ
Device Quiescent Current
mA
180
220
260
R
TH
, j-l
Thermal Resistance (junction - lead)
°C/W
30
*
Device operating current at P1dB ramps up to approximately 420mA @880MHz, 410mA @1960MHz and 370mA @2140MHz
S
21
Small Signal Gain
S
11
Input VSWR
dBm
ACP
NF
Noise Figure
dB
Test Conditions:
T
a
= 25°C Z
O
= 50 Ohms
P
1dB
Output Power at 1 dB Compression
*
dBm
dBm
Typical ACP (IS-95) & Efficiency @ 1960MHz
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
15
16
17
Channel Power (dBm)
18
19
20
21
22
23
24
A
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
E
ACP 25C
Eff. 25C
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| SPB35N10 | 功能描述:MOSFET N-CH 100V 35A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| SPB35N10 G | 功能描述:MOSFET N-CH 100V 35A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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