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參數(shù)資料
| 型號： | SPD02N50C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS™ Power Transistor |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 267K |
| 代理商： | SPD02N50C3 |
2003-10-07
Page 3
SPD02N50C3
Final data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
1.8
max.
-
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=1.1A
S
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
190
-
pF
-
80
-
-
2
-
Effective output capacitance,
3)
energy related
V
GS
=0V,
V
DS
=0V to 400V
-
9
-
pF
Effective output capacitance,
4)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
o(tr)
-
17
-
t
d(on)
t
r
t
d(off)
t
f
V
DD
=350V,
V
GS
=0/10V,
I
D
=1.8A,
R
G
=25
-
10
-
ns
-
5
-
-
70
-
-
15
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=400V,
I
D
=1.8A
-
1.5
-
nC
-
4.5
-
Gate charge total
V
DD
=400V,
I
D
=1.8A,
V
GS
=0 to 10V
-
9
-
Gate plateau voltage
V
(plateau)
V
DD
=400V,
I
D
=1.8A
-
5
-
V
1Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
3
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
4
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPD02N50C3_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS Power Transistor |
| SPD02N50C3BTMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel |
| SPD02N60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMO Power Transistor |
| SPD02N60C3 | 功能描述:MOSFET COOL MOS PWR TRANS 650V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPD02N60C3 | 制造商:Infineon Technologies AG 功能描述:MOSFET COOLMOS N D-PAK |
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