參數(shù)資料
型號(hào): SPD04N80C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁(yè)數(shù): 2/11頁(yè)
文件大?。?/td> 252K
代理商: SPD04N80C3
2003-07-02
Page 2
SPD04N80C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 640 V,
I
D
= 4 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
-
max.
2
Thermal resistance, junction - case
R
thJC
R
thJA
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
-
-
-
-
75
50
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
sold
-
-
260
°C
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
800
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
V
GS
=0V,
I
D
=4A
V
Drain-Source avalanche
breakdown voltage
-
870
-
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=240
μΑ
,
V
GS
=
V
DS
V
DS
=800V,
V
GS
=0V,
T
j
=25°C,
2.1
3
3.9
T
j
=150°C
-
-
0.5
-
10
100
μA
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=2.5A,
T
j
=25°C
T
j
=150°C
-
-
1.1
3
1.3
-
Gate input resistance
R
G
f
=1MHz, open Drain
-
0.7
-
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