參數(shù)資料
型號: SPD04N80C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁數(shù): 4/11頁
文件大?。?/td> 252K
代理商: SPD04N80C3
2003-07-02
Page 4
SPD04N80C3
Final data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
-
max.
4
Inverse diode continuous
forward current
I
S
T
C
=25°C
A
Inverse diode direct current,
pulsed
I
SM
-
-
12
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
di
rr
/
dt
V
GS
=0V,
I
F
=
I
S
-
1
1.2
V
V
R
=640V,
I
F
=
I
S
,
d
i
F
/d
t
=100A/μs
-
520
-
ns
-
4
-
μC
-
12
-
A
Peak rate of fall of reverse
recovery current
-
300
-
A/μs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.033
K/W
0.063
0.113
0.432
0.423
0.14
Thermal capacitance
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.00008691
Ws/K
0.0003336
0.0004755
0.001405
0.003503
0.036
External Heatsink
T
j
T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
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