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參數(shù)資料
| 型號(hào)： | SPD04N80C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 252K |
| 代理商： | SPD04N80C3 |
2003-07-02
Page 3
SPD04N80C3
Final data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
3
max.
-
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=2.5A
S
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
570
-
pF
-
240
-
-
12
-
Effective output capacitance,
4)
energy related
V
GS
=0V,
V
DS
=0V to 480V
-
15.6
-
pF
Effective output capacitance,
5)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
o(tr)
-
33.7
-
t
d(on)
t
r
t
d(off)
t
f
V
DD
=400V,
V
GS
=0/10V,
I
D
=4A,
R
G
=22
-
25
-
ns
-
15
-
-
65
75
-
12
16
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=640V,
I
D
=4A
-
2.4
-
nC
-
11
-
Gate charge total
V
DD
=640V,
I
D
=4A,
V
GS
=0 to 10V
-
20
26
Gate plateau voltage
V
(plateau)
V
DD
=640V,
I
D
=4A
-
6
-
V
1Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220°C, reflow
4
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
5
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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