參數(shù)資料
型號(hào): SPD30N03S2L-08
廠商: SIEMENS AG
英文描述: OptiMOSPower-Transistor( MOS 型功率晶體管)
中文描述: 的OptiMOS功率晶體管(馬鞍山型功率晶體管)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 90K
代理商: SPD30N03S2L-08
2000-05-03
Page 5
SPD30N03S2L-08
Preliminary data
Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 80 μs
SPD30N03S2L-08
P
tot
= 125W
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75
I
D
V
GS [V]
a
a
2.6
b
b
2.8
c
c
3.0
d
d
3.2
e
e
3.4
f
f
3.6
g
g
3.8
h
h
4.5
i
i
10.0
Typ. drain-source-on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
SPD30N03S2L-08
0
10
20
30
40
50
A
I
D
65
0
2
4
6
8
10
12
14
16
18
20
22
26
R
D
V
GS
[V] =
d
3.2
d
e
e
3.4
f
f
3.6
g
g
3.8
h
h
4.5
i
i
10.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 μs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
V
GS
4.0
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
Typ. forward transconductance
g
fs
= f(
I
D
);
T
j
=25°C
parameter:
g
fs
0
20
40
60
80
100
A
130
I
D
0
10
20
30
40
50
60
70
S
90
g
f
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參數(shù)描述
SPD30N03S2L-10 功能描述:MOSFET N-CH 30V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPD30N03S2L-10 G 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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SPD30N03S2L10BUMA1 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 30A DPAK
SPD30N03S2L-10G 制造商:Infineon Technologies AG 功能描述: