參數(shù)資料
型號: SPI07N60C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁數(shù): 6/14頁
文件大小: 374K
代理商: SPI07N60C3
2004-04-07
Rev. 2.1
Page 6
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
5 Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 10 μs,
V
GS
0
5
10
15
V
DS
25
V
0
4
8
12
16
A
24
I
D
4,5V
5V
5,5V
6V
6,5V
7V
20V
10V
8V
8 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=150°C
parameter:
t
p
= 10 μs,
V
GS
0
2
4
6
8
10 12 14 16 18 20 22
V
25
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
4V
4.5V
5V
5.5V
6V
20V
8V
6.5V
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