參數(shù)資料
型號: SPI20N60C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS™ Power Transistor
文件頁數(shù): 1/14頁
文件大?。?/td> 314K
代理商: SPI20N60C3
2003-10-08
Page 1
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
@
T
jmax
R
DS(on)
I
D
650
V
A
0.19
20.7
P-TO262-3-1
P-TO263-3-2
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
20N60C3
20N60C3
20N60C3
20N60C3
Type
SPP20N60C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4398
SPB20N60C3
P-TO263-3-2
Q67040-S4397
SPI20N60C3
P-TO262-3-1
Q67040-S4550
SPA20N60C3
P-TO220-3-31 Q67040-S4410
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
20.7
13.1
20.7
1)
13.1
1)
A
I
D puls
E
AS
62.1
62.1
A
I
D
=10A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=20A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
690
690
mJ
E
AR
1
1
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
20
20
A
±20
±
30
208
±20
±
30
34.5
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SSPP_B
-55...+150
°C
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