參數(shù)資料
型號: SPI07N60C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁數(shù): 8/14頁
文件大小: 374K
代理商: SPI07N60C3
2004-04-07
Rev. 2.1
Page 8
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
13 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 μs
2
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
A
SPP07N60C3
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
14 Typ. switching time
t
=
f
(
I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=12
0
1
2
3
4
5
6
A
8
I
D
0
10
20
30
40
50
60
70
ns
90
t
td(off)
tf
td(on)
tr
15 Typ. switching time
t
=
f
(
R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=7.3 A
0
20
40
60
80
100
130
R
G
0
50
100
150
200
250
300
350
400
ns
500
t
td(off)
td(on)
tf
tr
16 Typ. drain current slope
d
i
/d
t
= f(
R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=7.3A
0
20
40
60
80
100
130
R
G
0
500
1000
1500
2000
A/μs
3000
d
i
/
t
di/dt(on)
di/dt(off)
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