參數(shù)資料
型號(hào): SPI07N60S5
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁數(shù): 2/14頁
文件大?。?/td> 374K
代理商: SPI07N60S5
2004-04-07
Rev. 2.1
Page 2
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 7.3 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
-
max.
1.5
Thermal resistance, junction - case
R
thJC
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
K/W
Thermal resistance, junction - case, FullPAK
-
-
3.9
Thermal resistance, junction - ambient, leaded
-
-
62
Thermal resistance, junction - ambient, FullPAK
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
°C
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
600
-
V
Drain-Source avalanche
breakdown voltage
V
GS
=0V,
I
D
=7.3A
700
-
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=350
μ
A,
V
GS=VDS
V
DS
=600V,
V
GS
=0V,
T
j
=25°C
T
j
=150°C
2.1
3
3.9
-
-
0.5
-
1
100
μA
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=4.6A
T
j
=25°C
T
j
=150°C
-
-
0.54
1.46
0.6
-
Gate input resistance
R
G
f
=1MHz, open drain
-
0.8
-
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