- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376419 > SPI07N60S5 (INFINEON TECHNOLOGIES AG) Cool MOS⑩ Power Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | SPI07N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 374K |
| 代理商： | SPI07N60S5 |
2004-04-07
Rev. 2.1
Page 3
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=4.6A
-
6
-
S
Input capacitance
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
790
-
pF
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
4)
energy related
-
260
-
-
16
-
V
GS
=0V,
V
DS
=0V to 480V
-
30
-
Effective output capacitance,
5)
time related
C
o(tr)
-
55
-
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/13V,
I
D
=7.3A,
R
G
=12
,
T
j
=125°C
-
6
-
ns
-
3.5
-
Turn-off delay time
Fall time
-
60
100
-
7
15
Gate Charge Characteristics
Gate to source charge
Q
gs
Q
gd
Q
g
V
DD
=480V,
I
D
=7.3A
-
3
-
nC
Gate to drain charge
-
9.2
-
Gate charge total
V
DD
=480V,
I
D
=7.3A,
V
GS
=0 to 10V
-
21
27
Gate plateau voltage
V
(plateau)
V
DD
=480V,
I
D
=7.3A
-
5.5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
5
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SPI10N10 | CAP 1000PF 100V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| SPP10N10 | CAP 1000PF 100V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| SPI20N60C3 | Cool MOS™ Power Transistor |
| SPI73N03S2L-08 | OptiMOS Power-Transistor |
| SPB73N03S2L-08 | OptiMOS Power-Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPI07N60S5_02 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS⑩ Power Transistor |
| SPI07N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 7.3A TO-262 |
| SPI07N60S5IN | 制造商:Infineon Technologies AG 功能描述: |
| SPI07N60S5XKSA1 | 制造商:Infineon Technologies AG 功能描述:COOL MOS |
| SPI07N65C3 | 功能描述:MOSFET COOL MOS N-CH 730V 7.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。