參數(shù)資料
型號： SPU09N05
廠商： INFINEON TECHNOLOGIES AG
英文描述： SIPMOS PowerTransistor
中文描述： SIPMOS PowerTransistor
文件頁數(shù)： 1/8頁
文件大?。?/td> 146K
代理商： SPU09N05
SPD 09N05
Data Sheet
1
06.99
SIPMOS
PowerTransistor
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
55
0.1
9.2
V
DS
R
DS(on)
I
D
V
A
Features
N channel
Enhancement mode
Avalanche rated
d
v
/d
t
rated
175C operating temperature
Pin1
G
Pin2
D
Pin3
S
Packaging
Tape and Reel
Tube
Type
SPD09N05
SPU09N05
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4136
Q67040-S4130-A2
MaximumRatings
, at
T
j= 25 C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 C
T
C
= 100 C
Symbol
Unit
A
Value
9.2
6.5
I
D
Pulsed drain current
T
C
= 25 C
Avalanche energy, single pulse
I
D
= 9.2 A,
V
DD
= 25 V,
R
GS
= 25
I
Dpulse
37
mJ
E
AS
35
Avalanche energy, periodic limited by
T
jmax
Reverse diode d
v
/d
t
I
S
= 9.2 A,
V
DS
= 40 V, d
i
/d
t
= 200 A/μs
Gate source voltage
Power dissipation
T
C
= 25 C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
2.4
6
E
AR
d
v
/d
t
kV/μs
V
GS
P
tot
±
20
24
V
W
T
j,
T
stg
C
-55... +175
55/175/56
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