參數(shù)資料
型號(hào): SPU09N05
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS PowerTransistor
中文描述: SIPMOS PowerTransistor
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 146K
代理商: SPU09N05
SPD 09N05
Data Sheet
4
06.99
Electrical Characteristics
, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 40 V,
I
D
= 9.2 A
Gate to drain charge
V
DD
= 40 V,
I
D
= 9.2 A
Gate charge total
V
DD
= 40 V,
I
D
= 9.2 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 9.2 A
2
nC
1.3
Q
gs
-
-
3.5
Q
gd
5.25
-
7
11
Q
g
V
(plateau)
5.9
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
Inverse diode direct current,pulsed
T
C
= 25 C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 18.5 A
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/μs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/μs
I
S
-
-
9.2
A
I
SM
-
-
37
V
SD
-
1.05
V
1.8
t
rr
-
50
ns
75
Q
rr
-
μC
0.085
0.13
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