參數(shù)資料
型號(hào): SPU09N05
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS PowerTransistor
中文描述: SIPMOS PowerTransistor
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 146K
代理商: SPU09N05
SPD 09N05
Data Sheet
8
06.99
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 9.2 A
SPD09N05
0
2
4
6
8
nC
11
Q
Gate
0
2
4
6
8
10
12
V
16
V
G
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 9.2 A,
V
DD
= 25 V
R
GS
= 25
20
40
60
80
100
120
140
C
180
T
j
0
5
10
15
20
25
30
mJ
40
E
A
Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
-60
-20
20
60
100
140
C
T
j
200
50
52
54
56
58
60
62
64
V
66
SPD09N05
V
(
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