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參數(shù)資料
| 型號(hào)： | SST113-T1 |
| 英文描述： | TRANSISTOR J-FET SOT-23 |
| 中文描述： | 晶體管的J - FET的SOT - 23封裝 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 76K |
| 代理商： | SST113-T1 |
J/SST111 Series
2
Siliconix
S-52424—Rev. D, 14-Apr-97
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 seconds)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–35 V
50 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . .
–55 to 150 C
–55 to 150 C
. . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
(TO-236)
(TO-226AA)
350 mW
360 mW
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/ C above 25 C
Specifications
a
Limits
J/SST111
J/SST112
J/SST113
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–55
–35
–35
–35
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 5 V, I
D
= 1 A
–3
–10
–1
–5
–3
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
20
5
2
mA
Gate Reverse Current
I
GSS
V
GS
= –15 V, V
DS
= 0 V
–0.005
–1
–1
–1
nA
T
A
= 125 C
–3
Gate Operating Current
I
G
V
DG
= 15 V, I
D
= 10 mA
–5
pA
Drain Cutoff Current
I
D(off)
V
DS
= 5 V, V
GS
=
V
0.005
1
1
1
nA
T
A
= 125 C
3
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, V
DS
= 0.1 V
30
50
100
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source Forward
Transconductance
g
fs
V
= 20 V, I
= 1 mA
f = 1 kHz
6
mS
Common-Source
Output Conductance
g
os
DS
,
D
25
S
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
30
50
100
Common-Source
Input Capacitance
C
iss
V
= 0 V, V
=
f = 1 MHz
V
7
12
12
12
pF
Common-Source Reverse
Transfer Capacitance
C
rss
DS
GS
3
5
5
5
Equivalent Input
Noise Voltage
e
n
V
DG
= 10 V, I
D
= 1 mA
f = 1 kHz
3
nV
√
Hz
Switching
Turn-On Time
t
d(on)
2
t
r
V
DD
= 10 V, V
GS(H)
= 0 V
S it hi
See Switching Circuit
2
ns
Turn-Off Time
t
d(off)
GS( )
6
t
f
15
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
NCB
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