參數(shù)資料
型號(hào)： SST113-T1
英文描述： TRANSISTOR J-FET SOT-23
中文描述： 晶體管的J - FET的SOT - 23封裝
文件頁數(shù)： 4/5頁
文件大?。?/td> 76K
代理商： SST113-T1
J/SST111 Series
4
Siliconix
S-52424—Rev. D, 14-Apr-97
Typical Characteristics (Cont’d)
1 pA
Noise Voltage vs. Frequency
100
10
1
10
100
1 k
100 k
10 k
I
D
= 10 mA
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
g
fs
and g
os
@ V
DS
= 20 V
V
GS
= 0 V, f = 1 kHz
40
0
0
–2
–10
500
250
0
g
f
S
g
–
g
fs
g
os
Gate Leakage Current
0
30
1 nA
100 pA
10 pA
0.1 pA
–
I
G
T
A
= 125 C
T
A
= 25 C
1 mA
I
GSS
@ 25 C
10 nA
I
D
= 10 mA
Common-Gate Input Admittance
100
10
1
0.1
100
1000
200
500
(
g
ig
b
ig
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25 C
Common-Gate Forward Admittance
Common-Gate Reverse Admittance
100
10
1
0.1
100
1000
200
500
(
–g
fg
b
fg
g
fg
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25 C
10
1.0
0.1
0.01
100
1000
200
500
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25 C
–g
rg
–b
rg
+g
rg
(
V
DG
– Drain-Gate Voltage (V)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
f – Frequency (Hz)
f – Frequency (MHz)
f – Frequency (MHz)
f – Frequency (MHz)
30
20
10
–4
–6
–8
I
GSS
@ 125 C
10 mA
1 mA
6
12
18
24
V
DS
= 10 V
I
D
= 1 mA
(
e
n
/
√
)
–
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