參數(shù)資料
型號： SST113-T1
英文描述： TRANSISTOR J-FET SOT-23
中文描述： 晶體管的J - FET的SOT - 23封裝
文件頁數(shù)： 5/5頁
文件大?。?/td> 76K
代理商： SST113-T1
J/SST111 Series
Siliconix
S-52424—Rev. D, 14-Apr-97
5
Typical Characteristics (Cont’d)
–
I
D
Output Characteristics
100
0
10
80
60
40
20
0
V
DS
– Drain-Source Voltage (V)
2
4
6
8
Common-Gate Output Admittance
100
10
1
0.1
100
1000
200
500
(
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25 C
f – Frequency (MHz)
–
I
D
Output Characteristics
40
0
1.0
32
24
16
8
0
V
DS
– Drain-Source Voltage (V)
0.2
0.4
0.6
0.8
–
I
D
Transfer Characteristics
100
0
–5
80
60
40
20
0
V
GS
– Gate-Source Voltage (V)
–1
–2
–3
–4
g
og
b
og
V
GS
= 0 V
–0.5
–1.0
–1.5
–2.0
–2.5
V
GS(off)
= –4 V
V
GS(off)
= –4 V
V
GS
= 0 V
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
V
GS(off)
= –4 V
T
A
= –55 C
25 C
125 C
V
DS
= 20 V
Switching Time Test Circuit
J/SST111
J/SST112
J/SST113
V
GS(L)
–12 V
–7 V
–5 V
R
L
*
800
1600
3200
I
D(on)
12 mA
6 mA
3 mA
*Non-inductive
Input Pulse
Sampling Scope
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
51
51
1 k
V
GS
Scope
V
DD
R
L
OUT
V
GS(H)
V
GS(L)
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