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參數(shù)資料
| 型號： | STB60NE03L-12T4 |
| 英文描述： | TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:15.3V; Breakdown Voltage, Vbr:17.1V; Package/Case:DO-201; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Current IPP @ 10x1000uS:60.3A RoHS Compliant: Yes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第60A條（?。﹟對263AB |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | STB60NE03L-12T4 |
3/9
STB60NE06-16
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s,duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 10 V
40
125
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48V I
D
= 60A V
GS
= 10V
115
25
40
160
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 48 V
R
G
= 4.7
(Inductive Load, Figure 5)
I
D
= 60 A
V
GS
= 10 V
15
150
180
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 60 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
V
DD
= 30 V
(see test circuit, Figure 5)
di/dt = 100A/
μ
s
T
j
= 150
°
C
100
0.4
8
ns
μ
C
A
Thermal Impedance
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB60NE06-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE06-16 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE06-16T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-263AB |
| STB60NE06L-16 | 制造商:STMicroelectronics 功能描述: |
| STB60NE06L-16T4 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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