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參數(shù)資料
| 型號： | STB60NE03L-12T4 |
| 英文描述： | TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:15.3V; Breakdown Voltage, Vbr:17.1V; Package/Case:DO-201; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Current IPP @ 10x1000uS:60.3A RoHS Compliant: Yes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第60A條（丁）|對263AB |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | STB60NE03L-12T4 |
9/9
STB60NE06-16
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| STB60NF06 | N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET⑩ POWER MOSFET |
| STB60NF10 | N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET |
| STB60NF10T4 | N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET |
| STB6LNC60T4 | TVS Diode; Leaded Process Compatible:Yes |
| STB6NA60-1 | 82V, 1.5KW TRANZORB, 1.5 KE82A, IN6293A |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB60NE06-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE06-16 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB60NE06-16T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-263AB |
| STB60NE06L-16 | 制造商:STMicroelectronics 功能描述: |
| STB60NE06L-16T4 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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