參數(shù)資料
型號(hào)： STB60NF06T4
英文描述： 39V TRANSORB DIODE
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|第60A條（?。﹟對(duì)263AB
文件頁數(shù)： 2/9頁
文件大?。?/td> 143K
代理商： STB60NF06T4
STB60NE06-16
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(T
case
= 25
°
C unless otherwise specified)
OFF
ON
(*
)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1
62.5
300
°
C/W
°
C/W
°
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125
°
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
±
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250
μ
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 30 A
0.013
0.016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(*)
Forward Transconductance
V
DS
>I
D(on)
xR
DS(on)max
I
D
=30 A
20
35
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
4600
580
140
pF
pF
pF
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB60NF10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET? II Power MOSFET
STB60NF10_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET? II Power MOSFET
STB60NF10-1 功能描述:MOSFET N Ch 100V 0.019Ohm 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB60NF10T4 功能描述:MOSFET N Ch 100V 0.019Ohm 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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