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參數(shù)資料
| 型號(hào)： | STD100NH02LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 60A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直|第60A條（?。﹟對(duì)252AA |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 171K |
| 代理商： | STD100NH02LT4 |
1/10
December 2002
STD100NH02L
N-CHANNEL 20V - 0.0038
- 60A DPAK/IPAK
STripFET
III POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0038
@ 10 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
The STD100NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET
technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
TYPE
V
DSS
R
DS(on)
I
D
STD100NH02L
20 V
< 0.0048
60 A(#)
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(#)
Drain Current (continuous) at T
C
= 25
°
C
I
D
(#)
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(#) Value limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 10V
Parameter
Value
20
20
±
20
60
60
240
100
0.67
800
Unit
V
V
V
A
A
A
W
W/
°
C
mJ
-55 to 175
°
C
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD100NH03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET |
| STD100NH03L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET |
| STD100NH03LT4 | 功能描述:MOSFET N-Ch 30 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD-101 | 功能描述:電線鑒定 3/8IN WIRE MRKR TAG Refill 18-10awg RoHS:否 制造商:TE Connectivity / Q-Cees 產(chǎn)品:Labels and Signs 類型: 材料:Vinyl 顏色:Blue 寬度:0.625 in 長度:1 in |
| STD10100CTR | 功能描述:DIODE ARRAY SCHOTTKY 100V DPAK 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 二極管配置:1 對(duì)共陰極 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）（每二極管）:- 不同 If 時(shí)的電壓 - 正向（Vf）:750mV @ 5A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:- 不同?Vr 時(shí)的電流 - 反向漏電流:120μA @ 100V 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1 |
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