參數(shù)資料
型號(hào)： STD10NF10T4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第13A條（?。﹟對(duì)252AA
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 171K
代理商： STD10NF10T4
1/10
December 2002
STD100NH02L
N-CHANNEL 20V - 0.0038
- 60A DPAK/IPAK
STripFET
III POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0038
@ 10 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
The STD100NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET
technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
TYPE
V
DSS
R
DS(on)
I
D
STD100NH02L
20 V
< 0.0048
60 A(#)
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(#)
Drain Current (continuous) at T
C
= 25
°
C
I
D
(#)
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(#) Value limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 10V
Parameter
Value
20
20
±
20
60
60
240
100
0.67
800
Unit
V
V
V
A
A
A
W
W/
°
C
mJ
-55 to 175
°
C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STD10PF06-1 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA
STD10PF06T4 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA
STD10PF06 P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET
STD10 Fuse
STD16 Fuse
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD10NF10T4 制造商:STMicroelectronics 功能描述:MOSFET N CH 100V 13A DPAK 制造商:STMicroelectronics 功能描述:MOSFET, N CH, 100V, 0.13OHM, 13A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes
STD10NF10T4 制造商:STMicroelectronics 功能描述:MOSFET N CH 100V 13A DPAK
STD10NM50N 功能描述:MOSFET N-CH 500 V Pwr 7A Mdmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD10NM60N 功能描述:MOSFET N-channel 600 V Mdmesh 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD10NM60ND 功能描述:MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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