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參數(shù)資料
| 型號： | STD10N10L1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-251 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 10A條（?。﹟至251 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 171K |
| 代理商： | STD10N10L1 |
STD100NH02L
10/10
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| STD10NF10-1 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) | TO-251AA |
| STD10NF10T4 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) | TO-252AA |
| STD10PF06-1 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA |
| STD10PF06T4 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA |
| STD10PF06 | P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| STD10N60DM2 | 功能描述:N-CHANNEL 600 V, 0.26 OHM TYP., 制造商:stmicroelectronics 系列:MDmesh?? 包裝:剪切帶（CT） 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET (Metal Oxide) 漏源極電壓（Vdss）:650V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:530 毫歐 @ 4A，10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:15nC @ 10V 不同 Vds 時的輸入電容（Ciss）:529pF @ 100V FET 功能:- 功率耗散（最大值）:* 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標準包裝:1 |
| STD10N60M2 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:STD10N60M2 Series 600 V 7.5 A 0.6 Ohm N-channel Power MOSFET - TO-252-3 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 7.5A DPAK 制造商:STMicroelectronics 功能描述:600V,0.56,7.5A,N-Channel Power MOSFET 制造商:STMicroelectronics 功能描述:N-channel 600V,0.56Ohm,7.5A Power MOSFET |
| STD10NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.1ohm - 10A DPAK STripFET⑩ POWER MOSFET |
| STD10NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 100V 13A TO252 |
| STD10NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK |
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