參數(shù)資料
型號: STD10NF10T4
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 100V的五(巴西)直|第13A條(?。﹟對252AA
文件頁數(shù): 10/10頁
文件大?。?/td> 171K
代理商: STD10NF10T4
STD100NH02L
10/10
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相關(guān)PDF資料
PDF描述
STD10PF06-1 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA
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STD10PF06 P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD10NF10T4 制造商:STMicroelectronics 功能描述:MOSFET N CH 100V 13A DPAK 制造商:STMicroelectronics 功能描述:MOSFET, N CH, 100V, 0.13OHM, 13A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes
STD10NF10T4 制造商:STMicroelectronics 功能描述:MOSFET N CH 100V 13A DPAK
STD10NM50N 功能描述:MOSFET N-CH 500 V Pwr 7A Mdmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD10NM60N 功能描述:MOSFET N-channel 600 V Mdmesh 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD10NM60ND 功能描述:MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube