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參數(shù)資料
| 型號(hào)： | SUD50P04-15 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 40-V (D-S), 175C MOSFET |
| 中文描述： | P通道40 - V（下局副局長(zhǎng)），175C MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 62K |
| 代理商： | SUD50P04-15 |
SUD50P04-15
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –250 A
–40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –40 V, V
GS
= 0 V
–1
A
V
DS
= –40 V, V
GS
= 0 V, T
J
= 125 C
–50
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –10 V
–120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= –10 V, I
D
= –30 A
0.012
0.015
r
DS(on)
V
GS
= –10 V, I
D
= –30 A, T
J
= 125 C
0.024
V
GS
= –4.5 V, I
D
= –20 A
0.018
0.023
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –30 A
20
S
Dynamic
b
Input Capacitance
C
iss
5400
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
640
pF
Reverse Transfer Capacitance
C
rss
300
Total Gate Charge
c
Q
g
V
DS
= –20 V V
V
GS
= –10 V, I
D
= –50 A
10 V I
85
130
Gate-Source Charge
c
Q
gs
25
nC
Gate-Drain Charge
c
Q
gd
15
Turn-On Delay Time
c
t
d(on)
V
= –20 ,
= 0 4
50 A V
–50 A, V
GEN
= –10 V, R
G
= 2.5
15
25
Rise Time
c
t
r
I
D
10 V R
2 5
380
580
ns
Turn-Off Delay Time
c
t
d(off)
75
115
Fall Time
c
t
f
140
210
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
–150
A
Diode Forward Voltage
a
V
SD
I
F
= –50 A, V
GS
= 0 V
–1.2
–1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= –50 A, di/dt = 100 A/ s
40
80
ns
Notes
a.
b.
c.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50P04-15 | 制造商:Vishay Siliconix 功能描述:MOSFET P D-PAK |
| SUD50P04-15_05 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:P-Channel 40-V (D-S), 175C MOSFET |
| SUD50P04-15-E3 | 功能描述:MOSFET 40V 50A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50P04-15-T4 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 40V 50A 3PIN TO-252 - Tape and Reel |
| SUD50P04-23 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:P-Channel 40-V (D-S), 175 ∑C MOSFET |
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