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參數(shù)資料
| 型號： | SUM60N04-12LT |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | SUM60N04-12LT |
SUM60N04-12LT
Vishay Siliconix
New Product
Document Number: 71620
S-03830
—
Rev. A, 28-May-01
www.vishay.com
3
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 1 mA
40
V
GS
Clamp Voltage
V
GS
V
DS
= 0 V, I
G
= 20 A
10
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 1 mA
1
2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
5 V
250
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 35 V, V
GS
= 0 V
1
V
DS
= 35 V, V
GS
= 0 V, T
J
= 125 C
50
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 35 V, V
GS
= 0 V, T
J
= 175 C
250
V
GS
= 10 V, I
D
= 20 A
0.0075
0.009
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.0135
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.018
V
GS
= 4.5 V, I
D
= 20 A
0.0095
0.012
V
FD1
I
F
= 250 A
675
735
Sense Diode Forward Voltage
V
FD2
I
F
= 250 A
675
735
mV
Sense Diode Forward Voltage Increase
V
F
From I
F
= 125 A to I
F
= 250 A
25
50
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
35
S
Dynamic
b
Input Capacitance
C
iss
1920
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
560
pF
Reverse Transfer Capacitance
C
rss
210
Total Gate Charge
c
Q
g
51
70
Gate-Source Charge
c
Q
gs
V
= 20 V,
V
= 10 V, I
= 25 A
DS
GS
5.5
nC
Gate-Drain Charge
c
Q
gd
D
12
Turn-On Delay Time
c
t
d(on)
20
40
Rise Time
c
t
r
V
DD
= 20 V, R
L
= 0.8
25 A, V
GEN
= 10 V, R
= 2.5
70
120
Turn-Off Delay Time
c
t
d(off)
I
D
35
70
ns
Fall Time
c
t
f
G
20
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
60
Pulsed Current
I
SM
240
A
Forward Voltage
a
V
SD
I
F
= 60 A, V
GS
= 0 V
1.4
V
Reverse Recovery Time
t
rr
I
F
= 60 A, di/dt = 100 A/ s
40
60
ns
Notes:
a
b.
c
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUM60N04-12LT-E3 | 功能描述:MOSFET 40V 60A 110W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N06-15 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) 175C MOSFET |
| SUM60N06-15-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 60A 3PIN TO-263 - Rail/Tube |
| SUM60N08-07C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Current-Sensing Power MOSFETs |
| SUM60N08-07T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED) |
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