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參數(shù)資料
| 型號： | SUM60N04-12LT |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | SUM60N04-12LT |
SUM60N04-12LT
Vishay Siliconix
New Product
Document Number: 71620
S-03830
—
Rev. A, 28-May-01
www.vishay.com
7
FIGURE 1.
–
+
C1
560 pF
C3
0.1 F
R7
10 k
1%
R4, 560 k , 1%
R6, 560
R5, 18 k
Gate
Output
Signal
IC1, LMV321
R2
22 k
1%
R1
180 k
1%
C2
0.1 F
+5 V
R3, 18 k
Power Ground
Signal Ground
S
INPUT
The SUM60N04-12LT provides a non-committed diode to
allow temperature sensing of the actual MOSFET chip. The
addition of one simple comparator and a few other
components is all that is required to implement a temperature
protected MOSFET. Since it has a very tight tolerance on
forward voltage, the forward voltage of the diode can be used
to provide to shutdown signal. The diode forward voltage falls
to around 0.4 V with a bias current of 250 A when the
MOSFET chip is close to the maximum permitted temperature
value. The external comparator used to detect over
temperature can also be used as a driver stage for the
MOSFET, meaning that the on/off input is logic compatible,
and can be driven from a logic gate.
A typical circuit is shown in Figure 1. Here a LMV321
operational amplifier is used to drive the MOSFET, and as a
comparator to when the maximum junction temperature is
reached. The circuit will turn on once more when the chip has
cooled to approximately 110 C, and can cycle on and off until
the fault is cleared or the power is removed. This circuit has
assumed a 5-V rail is available, but the circuit could easily be
adapted for a 12-V rail, for example.
The LMV321 op amp was selected to give reasonable output
current to drive the MOSFET at a reasonable price. The SC-70
package means that the protection circuit uses very little board
space. However the limited output current means that it can
only be used in slow switching applications, where one
microsecond switching time and limited dv/dt immunity can be
accepted. For PWM and other faster applications, a buffer
should be added to drive the MOSFET, or the schematic in
Figure 2 used to give fast switching speed.
The reference voltage for the trip point is derived from the 5-V
rail, which should have reasonable voltage accuracy and
stability (
0.5 V). A voltage reference could be added if
required, but the circuit is only intended to make the MOSFET
invulnerable to drastic faults that might otherwise cause it to
fail, not to give a precise shutdown point. 1% resistors are
used to provide a reference voltage of 0.545 V, giving a
nominal rising trip point of around 155 C, allowing for the
hysteresis drop over R7.
A 560-pF capacitor across the inputs of the comparator
provides some noise immunity and gives a response time of
around a micro second, just faster than the switching speed of
the MOSFET in this circuit (faster response has diminishing
returns as the turn-off time is fixed). This does have a side
effect of introducing such a delay at turn-on. If this is an issue
(although if this delay is an issue, the switching time should be
reviewed also), a separate driver could be added using a
comparator for over temperature detection only as shown in
Figure 2. The diode is then left biased whenever the power is
applied to the load and there is no turn-on delay. In a very noisy
environment C1 should be increased and additional
capacitors may also be required from each input of the
comparator to ground and on the logic input.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM60N04-12LT-E3 | 功能描述:MOSFET 40V 60A 110W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N06-15 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) 175C MOSFET |
| SUM60N06-15-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 60A 3PIN TO-263 - Rail/Tube |
| SUM60N08-07C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Current-Sensing Power MOSFETs |
| SUM60N08-07T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED) |
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