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參數(shù)資料
| 型號： | SUM85N03-06P |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SUM85N03-06P |
SUM85N03-06P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71903
S-20921
—
Rev. A, 01-Jul-02
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
30
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 24 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 20 A
0.0045
0.006
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.0085
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.011
V
GS
= 4.5 V, I
D
=
20 A
0.0072
0.009
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
20
S
Dynamic
b
Input Capacitance
C
iss
3100
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
565
pF
Reverse Transfer Capacitance
C
rss
255
Gate-Resistance
R
G
1.9
Total Gate Charge
b
Q
g
48
65
Gate-Source Charge
b
Q
gs
V
= 15 V,
V
= 10 V, I
= 50 A
DS
GS
10
nC
Gate-Drain Charge
b
Q
gd
D
7.5
Turn-On Delay Time
b
t
d(on)
12
20
Rise Time
b
t
r
V
= 15 V, R
= 0.3
50 A, V
GEN
= 10 V, R
G
= 2.5
12
20
Turn-Off Delay Time
b
t
d(off)
I
D
30
45
ns
Fall Time
b
t
f
10
15
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
c
Continuous Current
I
S
100
Pulsed Current
I
SM
200
A
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
1.2
1.5
V
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ s
35
70
ns
Notes
a.
b.
c.
Pulse test; pulse width
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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