參數(shù)資料
型號(hào): SUU50N03-07
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 25A I(D) | TO-251
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直|第25A條(?。﹟至251
文件頁數(shù): 1/4頁
文件大小: 44K
代理商: SUU50N03-07
SUU50N03-07
Vishay Siliconix
Document Number: 71295
S-01707—Rev. A, 07-Aug-00
www.vishay.com
1
N-Channel 30-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a, b
0.007 @ V
GS
= 10 V
25
30
0.010 @ V
GS
= 4.5 V
18
D
G
S
N-Channel MOSFET
Order Number:
SUU50N03-07
TO-251
S
G
D
Top View
and DRAIN-TAB
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
25
Continuous Drain Current (T
J
= 175 C)
a, b
T
A
= 100 C
I
D
18
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a, b
I
S
25
T
C
= 25 C
88
Maximum Power Dissipation
T
A
= 25 C
P
D
8.3
a, b
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
15
18
Junction-to-Ambient
a
Steady State
R
thJA
40
50
C/W
Junction-to-Case
R
thJC
1.4
1.7
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
t
10 sec.
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