參數(shù)資料
型號(hào): SYS82000RKXCLI-10
元件分類: SRAM
英文描述: 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, PSMA38
封裝: PLASTIC, MODULE, SIP-38
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 478K
代理商: SYS82000RKXCLI-10
Address Inputs
A0 ~ A20
Data Input/Output
D0 ~ D7
Chip Select
CS
Write Enable
WE
Output Enable
OE
No Connect
NC
Power (+5V)
V
CC
Ground
GND
Package Details
Pin Definition
Description
Features
Elm Road, West Chirton Industrial Estate, North Shields,
NE29 8SE, ENGLAND. TEL +44 (0191) 2930500. FAX +44 (0191)
2590997
Issue 1.2 : January 1999
SYS82000RKXC - 70/85/10/12
2M x 8 SRAM MODULE
Access Times of 70/85/100/120 ns.
Low Power Disapation:
Operating
600 mW (Max.)
Standby-L Version
1.1 mW (Max.)
5 Volt Supply ± 10%.
Completely Static Operation.
Low Voltage VCC Data Retention.
On-board Decoding & Decoupling Capacitors.
38 Pin Single-In-Line package (SIP).
Upgrade path to SYS84000RKXC (32Mbits).
The SYS82000RKXC is a plastic 16Mbit Static
RAM Module housed in a standard 38 pin Single In-
Line package organised as 2M x 8 with access
times of 70, 85,100, or 120 ns.
The module is constructed using four 512Kx8
SRAMs in TSOPII packages mounted onto an FR4
epoxy substrate. This offers an extremely high
PCB packing density.
The device is offered in standard and low power
versions, with the -L module having a low voltage
data retention mode for battery backed applications.
Block Diagram
Pin Functions
Plastic 38 pin Single-In-Line (SIP)
NC
A20
Vcc
WE
D2
D3
D0
A1
A2
A3
A4
GND
D5
A10
A11
A5
A13
A14
A19
CS
A15
A16
A12
A18
A6
D1
GND
A0
A7
A8
A9
D7
D4
D6
A17
Vcc
OE
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
Pin 38 is A21 on the
SYS84000RKXC upgrade module.
512K x 8
SRAM
A0 - A18
WE
OE
A19
A20
CS
DECODER
CS
512K x 8
SRAM
CS
512K x 8
SRAM
CS
512K x 8
SRAM
CS
D0 - D7
TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES
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