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參數(shù)資料
| 型號(hào)： | SYS82000RKXCLI-10 |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, PSMA38 |
| 封裝： | PLASTIC, MODULE, SIP-38 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 478K |
| 代理商： | SYS82000RKXCLI-10 |
ISSUE 1.2 : January 1999
SYS82000RKXC - 70/85/10/12
2
DC OPERATING CONDITIONS
Absolute Maximum Ratings (1)
Parameter
Symbol
min
typ
max
unit
Voltage on any pin relative to V
SS
V
T
-0.3
-
+7
V
Power Dissipation
P
T
-
4.0
W
Storage Temperature
T
STG
-55
-
+125
oC
Notes :
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at those or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
(2) V
T
can be -3.0 V pulse of less than 30 ns.
Capacitance (V
CC=5V±10%,TA=25
oC)
Note: Capacitance calculated, not measured.
Parameter
Symbol
Test Condition
typ
max
Unit
Input Capacitance (CS,A19,A20)
C
IN1
V
IN = 0V
-
8
pF
Input Capacitance (A0-18,OE,WE)
C
IN2
V
IN = 0V
-
32
pF
I/O Capacitance
C
I/O
V
I/O = 0V
-
10
pF
Recommended Operating Conditions
Parameter
Symbol
min
typ
max
unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Input High Voltage
V
IH
2.2
-
Vcc+0.3
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
Operating Temperature
T
A
0
-
70
oC
T
AI
-40
-
85
oC (I)
Parameter
Symbol Test Condition
min
typ
max
Unit
I/P Leakage Current
I
LI
V
IN = GND to VCC
-4
-
4
A
Output Leakage Current
I
LO
CS = V
IH, VI/O = GND to VCC
-4
-
4
A
Operating Supply Current
I
CC
CS = V
IL, min cycle, Duty = 100%
-
109
mA
Standby Supply Current TTL levels
I
SB1
CS = V
IH
--
12
mA
-L Version
I
SB2
CS = V
CC-0.2V, 0.2 > VIN > VCC-0.2V
-
200
A
Output Low Voltage
V
OL
I
OL = 2.1mA
-
0.4
V
Output High Voltage
V
OH
I
OH = -1.0mA
2.4
-
V
DC Electrical Characteristics (V
CC=5V±10%)
TA 0 to 70OC
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