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參數(shù)資料
| 型號(hào)： | T436416C |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| 中文描述： | 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM |
| 文件頁數(shù)： | 5/28頁 |
| 文件大小： | 651K |
| 代理商： | T436416C |
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TE
CH
tm
DC CHARACTERISTICS
T
A
= 0 to 70
°
C
, V
IH
(min)/V
IL
(max)=2.0V/0.8V
T436416C
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
Speed version
-6
Parameter
Symbol
-7
Unit
Test Condition
Note
Operating Current
( One Bank Active) I
CC1
110
100
mA
Burst Length = 1
t
RC
≥
t
RC
(min) ,
t
CC
≥
t
CC
(min),I
OL
= 0 mA
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
1,2
I
CC2
P
2
Precharge Standby
Current in power-
down mode
I
CC2
PS
1
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
∞
2
I
CC2
N
20
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
Input signals are changed one time during 2CLK
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Precharge Standby
Current in non
power-down mode
I
CC2
NS
15
mA
Input signals are stable
CKE
≤
VIL(max),
t
CC
=
t
CC
(min)
2
I
CC3
P
10
Active Standby
Current in power-
down mode
I
CC3
PS
10
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
∞
2
I
CC3
N
30
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
Input signals are changed one time during 2CLK
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Active Standby
Current in non
power-down mode
(One Bank Active) I
CC3
NS
25
mA
Input signals are stable
2
150
140
CAS Latency 3
Operating Current
(Burst Mode)
I
CC4
150
140
mA
CAS Latency 2
I
OL
=0 mA,Page Burst
All Band Activated
t
CCD
=
t
CCD
(min)
1,2
Refresh Current
I
CC5
180
180
mA t
RC
≥
t
RC
(min)
2
Self refresh
Current
I
CC6
1
mA
CKE
≤
0.2V
Note: 1. Measured with output open. Addresses are changed one time during 2CLKS .
2.
t
CC
: Clock cycle time.
t
RC
: Row cycle time.
t
CCD
: Column address to column address delay time.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T436416C-6S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-6SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T436416C-6S | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7S | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7SG | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
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