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參數(shù)資料
| 型號： | TDA7580 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | FM/AM DIGITAL IF SAMPLING PROCESSOR |
| 中文描述： | 調(diào)頻/調(diào)幅數(shù)字IF采樣處理器 |
| 文件頁數(shù)： | 11/31頁 |
| 文件大?。?/td> | 450K |
| 代理商： | TDA7580 |
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11/31
TDA7580
Note:
1. The leakage currents are generally very small, <1nA. The value given here, 1
μ
A, is the maximum that can occur after an Electro-
static Stress on the pin.
2. On pins:17 to 20,23 to 26,29 to 33,36 to 39,42 to 46,49 to 52,55 to 58.
3. On pins: 13 and 14.
4. Same check on the analogue pin 15 (phisically without pull-up-down)
5. On pins:25, 26,32,49,50,55,56
6. On pins:17 to 20,23 to 24,29 to 31,33,36 to 39,42 to 46,51, 52,57, 58
LOW VOLTAGE CMOS INTERFACE DC ELECTRICAL CHARACTERISTICS
Note:
1. It is the source/sink current under worst case conditions and reflects the name of the I/O cell according to the drive capability.
HIGH VOLTAGE CMOS INTERFACE DC ELECTRICAL CHARACTERISTICS
Note:
1. It is the source/sink current under worst case conditions and reflects the name of the I/O cell according to the drive capability
2. X=4mA for pins 17 to 20,29,30,32,36 to 39,42 to 46; X=8mA for pins 23 to 26,49 to 52,55 to 58.
I
ozFT
5V Tolerant Tri-state Output
leakage (without pull up/down
device)
V
o
= 0V or V
dd
(note 1)
1
μ
A
V
o
= 5.5V
1
3
μ
A
I
latchup
I/O latch-up current
V < 0V, V > V
dd
200
mA
V
esd
Electrostatic Protection
Leakage, 1
μ
A
2000
V
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
il
Low Level Input Voltage
1.70V
<=
VDD
<=
1.90V
0.3*V
DD3
V
V
ih
High Level Input Voltage
1.70V
<=
VDD
<=
1.90V
0.8*V
DD3
V
V
ol
Low level output Voltage
I
ol
= 4mA (notes 1)
0.15
V
V
oh
High level output Voltage
I
ol
= -4mA (notes 1)
V
DD
-0,15
V
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
il
Low Level Input Voltage
3.15V
<=
VDD3
<=
3.45V
0.8
V
V
ih
High Level Input Voltage
3.15V
<=
VDD3
<=
3.45V
2.0
V
V
ol
Low level output Voltage
I
ol
= XmA (notes 1 and 2)
0.15
V
V
oh
High level output Voltage
I
ol
= -XmA (notes 1 and 2)
V
DD3
-0.15
V
CURRENT CONSUMPTION
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
I
DD
Current through V
DD
Power
Supply
V
DD
=1.8V,VDD3=3.3V
All digital blocks working
120
200
mA
I
DDH
Current through V
DDH
Power
Supply
V
DD
=1.8V,VDD3=3.3V
All I/Os working with 5pF load
3
5
mA
I
SD
Current through V
SD
Power
Supply
V
DD
=1.8V,VDD3=3.3V
36
45
54
mA
I
OSCdc
Current through V
OSC
Power
Supply
V
DD
=1.8V,VDD3=3.3V
without quartz
5.5
8
10.5
mA
GENERAL INTERFACE ELECTRICAL CHARACTERISTICS
(continued)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
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