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參數(shù)資料
| 型號： | TDA8580J |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Multi-purpose power amplifier |
| 中文描述： | 多用途功率放大器 |
| 文件頁數(shù)： | 14/28頁 |
| 文件大?。?/td> | 181K |
| 代理商： | TDA8580J |
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2000 Apr 18
14
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
Gv
(dB)
30
31
32
33
MGS717
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.21 Gain as a function of input frequency;
BTL mode.
C
i
= 470 nF.
0.8
0.4
0
0.4
0.8
MGS715
Po
(W)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.22 Power bandwidth as a function of
frequency; BTL mode.
THD = 0.5%; R
L
= 4
; V
P
= 14.4 V.
handbook, halfpage
Po
(W)
0.8
0.4
0
0.4
MGS716
10
10
2
10
3
10
4
10
5
fi (Hz)
THD = 0.5%; R
L
= 8
; V
P
= 24 V.
Fig.23 Power bandwidth as a function of
frequency; BTL mode.
handbook, halfpage
cs
(dB)
70
66
58
62
54
MGS718
(2)
(1)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.24 Channel separation as a function of
frequency; BTL mode.
P
o
= 2 W; R
L
= 4
; V
P
= 14.4 V.
(1) Channels 3 and 4 to channels 1 and 2.
(2) Channels 1 and 2 to channels 3 and 4.
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